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Former Intel CEO Pat Gelsinger bets on Nagare Labs to vault the memory wall

Source: The RegisterTobias MannOctober 26, 2026
Read the full story at The Register

Nagare Labs, founded by Georgia Tech researchers, developed Z2RAM, a next-generation memory technology based on oxide semiconductors that aims to overcome limitations of existing SRAM, DRAM and flash architectures. According to Gelsinger, the innovation delivers performance approaching SRAM while achieving density closer to DRAM, with manufacturing advantages over HBM and LPDDR solutions. Playground Global, where Gelsinger is now a partner, is helping fund the venture.

Key points

  • Combines SRAM speed with DRAM-like density on oxide semiconductors
  • Addresses 30-year gap in memory architecture innovation
  • Backed by Playground Global with Gelsinger's involvement

Summary and key points written by AI from the headline and a short excerpt, so they can be incomplete or wrong. The Register did the reporting; read the original for the full story.

Read the full story at The Register

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